JPS6159875A - 相補型半導体装置 - Google Patents

相補型半導体装置

Info

Publication number
JPS6159875A
JPS6159875A JP59180361A JP18036184A JPS6159875A JP S6159875 A JPS6159875 A JP S6159875A JP 59180361 A JP59180361 A JP 59180361A JP 18036184 A JP18036184 A JP 18036184A JP S6159875 A JPS6159875 A JP S6159875A
Authority
JP
Japan
Prior art keywords
channel
electrode
layer
conductivity type
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59180361A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0439775B2 (en]
Inventor
Takashi Mimura
高志 三村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59180361A priority Critical patent/JPS6159875A/ja
Publication of JPS6159875A publication Critical patent/JPS6159875A/ja
Publication of JPH0439775B2 publication Critical patent/JPH0439775B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP59180361A 1984-08-31 1984-08-31 相補型半導体装置 Granted JPS6159875A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59180361A JPS6159875A (ja) 1984-08-31 1984-08-31 相補型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59180361A JPS6159875A (ja) 1984-08-31 1984-08-31 相補型半導体装置

Publications (2)

Publication Number Publication Date
JPS6159875A true JPS6159875A (ja) 1986-03-27
JPH0439775B2 JPH0439775B2 (en]) 1992-06-30

Family

ID=16081899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59180361A Granted JPS6159875A (ja) 1984-08-31 1984-08-31 相補型半導体装置

Country Status (1)

Country Link
JP (1) JPS6159875A (en])

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637119A (ja) * 1992-03-17 1994-02-10 Toshiba Corp 化合物半導体集積回路
JP2008508717A (ja) * 2004-07-30 2008-03-21 フリースケール セミコンダクター インコーポレイテッド 相補型金属−酸化膜−半導体電界効果トランジスタ構造

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637119A (ja) * 1992-03-17 1994-02-10 Toshiba Corp 化合物半導体集積回路
JP2008508717A (ja) * 2004-07-30 2008-03-21 フリースケール セミコンダクター インコーポレイテッド 相補型金属−酸化膜−半導体電界効果トランジスタ構造
TWI395329B (zh) * 2004-07-30 2013-05-01 Freescale Semiconductor Inc 互補式金屬-氧化物-半導體場效電晶體結構

Also Published As

Publication number Publication date
JPH0439775B2 (en]) 1992-06-30

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